The opportunity

Join our SiC power-device team as an R&D intern and contribute to the future of power electronics. You’ll support chip design and simulation while gaining hands-on experience across the full development cycle of SiC MOSFETs. Collaborate closely with experienced engineers and process specialists in a dynamic, inclusive environment. This is your chance to grow your TCAD skills and deepen your semiconductor knowledge in a real-world setting.

How you’ll make an impact

• Assist in the conceptual design and TCAD simulation of SiC power devices

• Work with our experienced engineers to refine device structures and optimize performance

• Predict electrical characteristics and validate simulation results

• Analyze data, document findings, and present insights in team meetings

• Contribute to regular project reviews with ideas for performance, cost and manufacturability improvements

Your background

• Master’s degree in Electrical Engineering, Physics, or Materials Science

• Experience with TCAD tools, ideally in SiC device simulation

• Understanding of SiC device physics

• Basic knowledge of semiconductor fabrication processes

• Strong analytical and data interpretation skills

• Fluent in English with excellent communication skills

More about us

We are a technology-driven company with a strong focus on innovation, continuous improvement, and sustainable manufacturing. We offer flexible working conditions, dedicated mentorship, and a supportive, inclusive environment where you can grow personally and professionally – empowering you to thrive while balancing life and work.